HM150N03D Todos los transistores

 

HM150N03D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM150N03D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 1135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO263

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HM150N03D datasheet

 ..1. Size:837K  cn hmsemi
hm150n03d.pdf pdf_icon

HM150N03D

HM150N03 N-Channel Enhancement Mode Power MOSFET Description The 15 D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 6.1. Size:674K  cn hmsemi
hm150n03k.pdf pdf_icon

HM150N03D

HM150N03K N-Channel Enhancement Mode Power MOSFET Description The 15 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 6.2. Size:929K  cn hmsemi
hm150n03.pdf pdf_icon

HM150N03D

HM150N03 N-Channel Enhancement Mode Power MOSFET Description The HM150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 9.1. Size:111K  chenmko
chm1503yjgp.pdf pdf_icon

HM150N03D

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM1503YJGP Dual Enhancement Mode Field Effect Transistor N-channel Q1 VOLTAGE 30 Volts CURRENT 8 Ampere N-channel Q2 VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely

Otros transistores... HM13N50F , HM13P10 , HM13P10K , HM1404 , HM1404B , HM1404C , HM1404D , HM150N03 , IRFB4115 , HM150N03K , HM15N02Q , HM15N10D , HM15N10K , HM15N50 , HM15N50F , HM15P10D , HM15P55K .

History: SE6880A | G30N20F | AP4953 | 2SJ234S | 2SK3084 | AP4606CS

 

 

 

 

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