HM16N60F Todos los transistores

 ..1. Size:827K  cn hmsemi
 hm16n60f.pdf

VDSS 600 V General Description ID 16 A HM16N60F, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 8.1. Size:1129K  cn hmsemi
 hm16n65f.pdf

HM16N65F VDSS 650 V General Description ID 16 A HM16N65F, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.51 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 9.1. Size:989K  cn hmsemi
 hm16n02d.pdf

HM16N02D 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The HM16N02D uses advanced trench technology to D provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This G device is suitable for use as a load switch or in PWM applications. General Features S VDS =20V ID =16A Marking and pin assignment RDS(ON)(T

 9.2. Size:2457K  cn hmsemi
 hm16n50 hm16n50f.pdf

HM16N50 / HM16N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on)typ. = 305m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 52nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p