HM18N03D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM18N03D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: DFN2X2-6L-B

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HM18N03D Datasheet (PDF)

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hm18n03d.pdf

HM18N03D30V N-Channel Enhancement Mode MOSFETDescription Schematic diagram The uses advanced trench technologyDto provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This Gdevice is suitable for use as a load switch or in PWM applications. General Features S VDS =30VID =18A Marking and pin assignment RDS(ON)(T

9.1. Size:89K philips
phm18nq15t.pdf

PHM18NQ15TTrenchMOS standard level FETRev. 02 20 August 2004 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC converter primary sid

9.2. Size:4054K cn hmsemi
hm18n50a hm18n50f.pdf

HM18N50A / HM18N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 500V, RDS(on)typ. = 236m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 69nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

9.3. Size:1112K cn hmsemi
hm18n40 hm18n40f hm18n40a.pdf

HM18N40 / HM18N40F / HM18N40A400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 400V, RDS(on) typ. = 0.20@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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