HM1N60R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM1N60R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 25 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10.5 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de HM1N60R MOSFET
HM1N60R Datasheet (PDF)
hm1n60r.pdf

Silicon N-Channel Power MOSFET HM1N60RGeneral Description VDSS 600 VHM1N60R, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit fo
hm1n60.pdf

N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package 0.5 A TO-92 ID 1.0 A IPAK/DPKAVDSS 600 V RdsonVgs=10V 15 Qg 6.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballastsbased on half bridge FEATU
hm1n60pr.pdf

Silicon N-Channel Power MOSFET HM1N60 General Description VDSS 600 VHM1N60PR, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circu
Otros transistores... HM18N50A , HM18N50F , HM18P10 , HM18P10K , HM19N40 , HM1N50MR , HM1N60 , HM1N60PR , 20N50 , HM1P10MR , HM1P15MR , HM1P15PR , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA , HM20N06KA .
History: JMSL0604AG | BSC152N10NSFG | BSC265N10LSFG | WMP08N65C4
History: JMSL0604AG | BSC152N10NSFG | BSC265N10LSFG | WMP08N65C4



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