HM20N50A Todos los transistores

 

HM20N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM20N50A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 280 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 70 nC
   trⓘ - Tiempo de subida: 400 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de MOSFET HM20N50A

 

HM20N50A Datasheet (PDF)

 ..1. Size:786K  cn hmsemi
hm20n50a.pdf

HM20N50A
HM20N50A

500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 20.0A, 500V, RDS(on) = 0.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 70nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche tested

 7.1. Size:863K  cn hmsemi
hm20n50f.pdf

HM20N50A
HM20N50A

500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 20.0A, 500V, RDS(on) = 0.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 70nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalan

 9.1. Size:97K  chenmko
chm20n06pagp.pdf

HM20N50A
HM20N50A

CHENMKO ENTERPRISE CO.,LTDCHM20N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.2. Size:733K  jiaensemi
jfhm20n60e.pdf

HM20N50A
HM20N50A

JFHM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.3. Size:711K  jiaensemi
jfhm20n60c.pdf

HM20N50A
HM20N50A

JFHM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.4. Size:830K  cn hmsemi
hm20n15a.pdf

HM20N50A
HM20N50A

HM20N15AN-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

 9.5. Size:526K  cn hmsemi
hm20n60a.pdf

HM20N50A
HM20N50A

HM20N60A VDSS 600 V General Description ID 20 A HM20N60A, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiza

 9.6. Size:394K  cn hmsemi
hm20n15.pdf

HM20N50A
HM20N50A

HM20N15NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

 9.7. Size:808K  cn hmsemi
hm20n120tb.pdf

HM20N50A
HM20N50A

IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Sym

 9.8. Size:962K  cn hmsemi
hm20n120t.pdf

HM20N50A
HM20N50A

HM20N120TTypical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25,TJ150 Figure4:reverse bias SOA,TJ=150,VGE=15V - 3 - Rev1.1 November. 2011 Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com HM20N120TFigure5:typical IGBT output characteristics, Fi

 9.9. Size:655K  cn hmsemi
hm20n06.pdf

HM20N50A
HM20N50A

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 9.10. Size:810K  cn hmsemi
hm20n60.pdf

HM20N50A
HM20N50A

20N60 VDSS 600 VGeneral Description ID 20 AHM20N60, the silicon N-channel EnhancedPD(TC=25) 250 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 9.11. Size:798K  cn hmsemi
hm20n120ab.pdf

HM20N50A
HM20N50A

IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Symbol

 9.12. Size:869K  cn hmsemi
hm20n65f.pdf

HM20N50A
HM20N50A

V General Description VDSS 650 ID 20 A HM20N65F, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 9.13. Size:620K  cn hmsemi
hm20n15ka.pdf

HM20N50A
HM20N50A

HM20N15KAN-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

 9.14. Size:877K  cn hmsemi
hm20n15d.pdf

HM20N50A
HM20N50A

HM20N15DN-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)

 9.15. Size:517K  cn hmsemi
hm20n15k.pdf

HM20N50A
HM20N50A

HM20N15KDescription The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

 9.16. Size:544K  cn hmsemi
hm20n06ka.pdf

HM20N50A
HM20N50A

HM20N06KAN-Channel Enhancement Mode Power MOSFET Description The HM20N06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 9.17. Size:565K  cn hmsemi
hm20n06ia.pdf

HM20N50A
HM20N50A

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

 9.18. Size:920K  cn hmsemi
hm20n60f.pdf

HM20N50A
HM20N50A

Silicon N-Channel Power MOSFET HM20N60F VDSS 600 V General Description ID 20 A HM20N60F, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching

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