HM20N60A Todos los transistores

 

HM20N60A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM20N60A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73 nS

Cossⓘ - Capacitancia de salida: 252 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO3P

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HM20N60A datasheet

 ..1. Size:526K  cn hmsemi
 hm20n60a.pdf pdf_icon

HM20N60A

HM20N60A VDSS 600 V General Description ID 20 A HM20N60A, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiza

 7.1. Size:733K  jiaensemi
 jfhm20n60e.pdf pdf_icon

HM20N60A

JFHM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 7.2. Size:711K  jiaensemi
 jfhm20n60c.pdf pdf_icon

HM20N60A

JFHM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 7.3. Size:810K  cn hmsemi
 hm20n60.pdf pdf_icon

HM20N60A

20N60 VDSS 600 V General Description ID 20 A HM20N60, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

MOSTRAR MÁS

Otros transistores... HM20N15 , HM20N15A , HM20N15D , HM20N15K , HM20N15KA , HM20N50A , HM20N50F , HM20N60 , STF13NM60N , HM20N60F , HM20N65F , HM20P02D , HM20P02Q , HM20PD05 , HM2300B , HM2300C , HM2300D .

History: AGM308S

 

 

 

 

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