HM20N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM20N65F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 82 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO220F

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HM20N65F Datasheet (PDF)

..1. Size:869K cn hmsemi
hm20n65f.pdf

V General Description VDSS 650 ID 20 A HM20N65F, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

8.1. Size:733K jiaensemi
jfhm20n60e.pdf

JFHM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

8.2. Size:711K jiaensemi
jfhm20n60c.pdf

JFHM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

8.3. Size:526K cn hmsemi
hm20n60a.pdf

HM20N60A VDSS 600 V General Description ID 20 A HM20N60A, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiza

8.4. Size:810K cn hmsemi
hm20n60.pdf

20N60 VDSS 600 VGeneral Description ID 20 AHM20N60, the silicon N-channel EnhancedPD(TC=25) 250 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

8.5. Size:920K cn hmsemi
hm20n60f.pdf

Silicon N-Channel Power MOSFET HM20N60F VDSS 600 V General Description ID 20 A HM20N60F, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HM10N70F | RFM10N12

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