HM20P02D Todos los transistores

 ..1. Size:935K  cn hmsemi
 hm20p02d.pdf

P-Channel Enhancement Mode Power MOSFET Description D The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,ID = -20A RDS(ON)

 7.1. Size:991K  cn hmsemi
 hm20p02q.pdf

HM20P02Q P-Channel Enhancement Mode Power MOSFET D Description The HM20P02Q uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RDS(ON)

 8.1. Size:115K  chenmko
 chm20p06pagp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM20P06PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * High density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Rugged

 9.1. Size:501K  cn hmsemi
 hm20pd05.pdf

P-Channel Enhancement Mode Power MOSFET Description The HM20PD05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = -20V,ID =- 5A RDS(ON)