FDMA7632 Todos los transistores

 

FDMA7632 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMA7632
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 9.3 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: MICROFET
 

 Búsqueda de reemplazo de FDMA7632 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDMA7632 Datasheet (PDF)

 ..1. Size:230K  fairchild semi
 fdma7632.pdf pdf_icon

FDMA7632

August 2010FDMA7632Single N-Channel PowerTrench MOSFET 30 V, 9 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low P

 7.1. Size:224K  fairchild semi
 fdma7630.pdf pdf_icon

FDMA7632

September 2010FDMA7630Single N-Channel PowerTrench MOSFET 30 V, 11 A, 13 mFeatures General Description Max rDS(on) = 13 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 20 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching

 8.1. Size:216K  fairchild semi
 fdma7670.pdf pdf_icon

FDMA7632

January 2012FDMA7670Single N-Channel PowerTrench MOSFET 30 V, 11 A, 15 mFeatures General Description Max rDS(on) = 15 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 22 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching Lo

 8.2. Size:242K  fairchild semi
 fdma7628.pdf pdf_icon

FDMA7632

May 2012FDMA7628Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 mFeatures General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 AThis Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 Aoptimize the rDS(ON) @ VGS = 1.5 V on specia

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


 
.