FDMA7632 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMA7632
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: MICROFET

Búsqueda de reemplazo de MOSFET FDMA7632

FDMA7632 Datasheet (PDF)

..1. Size:230K fairchild semi
fdma7632.pdf

August 2010FDMA7632Single N-Channel PowerTrench MOSFET 30 V, 9 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low P

7.1. Size:224K fairchild semi
fdma7630.pdf

September 2010FDMA7630Single N-Channel PowerTrench MOSFET 30 V, 11 A, 13 mFeatures General Description Max rDS(on) = 13 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 20 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching

8.1. Size:216K fairchild semi
fdma7670.pdf

January 2012FDMA7670Single N-Channel PowerTrench MOSFET 30 V, 11 A, 15 mFeatures General Description Max rDS(on) = 15 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 22 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching Lo

8.2. Size:242K fairchild semi
fdma7628.pdf

May 2012FDMA7628Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 mFeatures General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 AThis Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 Aoptimize the rDS(ON) @ VGS = 1.5 V on specia

8.3. Size:228K fairchild semi
fdma7672.pdf

April 2012FDMA7672Single N-Channel PowerTrench MOSFET 30 V, 9 A, 21 mFeatures General Description Max rDS(on) = 21 m at VGS = 10 V, ID = 9 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 32 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low Pr

8.4. Size:2886K cn vbsemi
fdma7628.pdf

FDMA7628www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SC-70-6L-

Otros transistores... STS3401 , FDMA507PZ , FDMA510PZ , FDMA520PZ , FDMA530PZ , FDMA6023PZT , FDMA7630 , STS3400 , IRF2807 , STS3116E , FDMA7670 , STS2622A , FDMA7672 , STS2621 , FDMB3800N , STS2620A , FDMB3900AN .

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