HM2312B Todos los transistores

 

HM2312B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM2312B
   Código: 2312
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 4.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
   Carga de la puerta (Qg): 10 nC
   Tiempo de subida (tr): 18 nS
   Conductancia de drenaje-sustrato (Cd): 300 pF
   Resistencia entre drenaje y fuente RDS(on): 0.033 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET HM2312B

 

HM2312B Datasheet (PDF)

 ..1. Size:648K  cn hmsemi
hm2312b.pdf

HM2312B
HM2312B

HM2312BN-Channel Enhancement Mode Power MOSFET Description DThe HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 8.1. Size:554K  cn hmsemi
hm2312.pdf

HM2312B
HM2312B

HM2312N-Channel Enhancement Mode Power MOSFET Description DThe HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.1. Size:413K  chenmko
chm2313qgp.pdf

HM2312B
HM2312B

CHENMKO ENTERPRISE CO.,LTDCHM2313QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

 9.2. Size:69K  chenmko
chm2316gp.pdf

HM2312B
HM2312B

CHENMKO ENTERPRISE CO.,LTDCHM2316GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 9.3. Size:108K  chenmko
chm2316qgp.pdf

HM2312B
HM2312B

CHENMKO ENTERPRISE CO.,LTDCHM2316QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*

 9.4. Size:352K  chenmko
chm2310gp.pdf

HM2312B
HM2312B

CHENMKO ENTERPRISE CO.,LTDCHM2310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturati

 9.5. Size:74K  chenmko
chm2314gp.pdf

HM2312B
HM2312B

CHENMKO ENTERPRISE CO.,LTDCHM2314GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

 9.6. Size:90K  chenmko
chm2313gp.pdf

HM2312B
HM2312B

CHENMKO ENTERPRISE CO.,LTDCHM2313GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 9.7. Size:154K  chenmko
chm2313gp-a.pdf

HM2312B
HM2312B

CHENMKO ENTERPRISE CO.,LTDCHM2313GP-ASURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s

 9.8. Size:1675K  cn vbsemi
hm2310pr.pdf

HM2312B
HM2312B

HM2310PRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

 9.9. Size:1881K  cn vbsemi
hm2310.pdf

HM2312B
HM2312B

HM2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

 9.10. Size:723K  cn hmsemi
hm2310b.pdf

HM2312B
HM2312B

HM2310BN Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co

 9.11. Size:402K  cn hmsemi
hm2318b.pdf

HM2312B
HM2312B

HM2318BN Channel Enhancement Mode MOSFET DESCRIPTION HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer

 9.12. Size:576K  cn hmsemi
hm2310pr.pdf

HM2312B
HM2312B

HM2310PRDescription The HM2310PR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other switching application. SGeneral Feature VDS =60V,ID =4.0A Schematic diagram RDS(ON)

 9.13. Size:514K  cn hmsemi
hm2319a.pdf

HM2312B
HM2312B

HM2319AP-Channel Enhancement Mode Power MOSFET DDescription The HM2319A uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SSchematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)

 9.14. Size:555K  cn hmsemi
hm2314.pdf

HM2312B
HM2312B

HM2314N-Channel Enhancement Mode Power MOSFET Description DThe HM2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.15. Size:476K  cn hmsemi
hm2310.pdf

HM2312B
HM2312B

HM2310N-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM2310 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a SBattery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)

 9.16. Size:711K  cn hmsemi
hm2314b.pdf

HM2312B
HM2312B

HM2314BN-Channel Enhancement Mode Power MOSFET Description DThe HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.17. Size:1351K  cn hmsemi
hm2318apr.pdf

HM2312B
HM2312B

HM2318 N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The HM is the N-Channel logic enhancement mode power RDS(ON) 28m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

 9.18. Size:1187K  cn hmsemi
hm2318a.pdf

HM2312B
HM2312B

HM2318A N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The HM2318A is the N-Channel logic enhancement mode power RDS(ON) 28m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) min

 9.19. Size:445K  cn hmsemi
hm2319.pdf

HM2312B
HM2312B

HM2319P-Channel Enhancement Mode Power MOSFET DDescription The HM2319 uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SSchematic diagram General Features VDS = -40V,ID = - A RDS(ON)

 9.20. Size:719K  cn hmsemi
hm2310c.pdf

HM2312B
HM2312B

HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co

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