HM2319 Todos los transistores

 ..1. Size:445K  cn hmsemi
 hm2319.pdf

HM2319 P-Channel Enhancement Mode Power MOSFET D Description The HM2319 uses advanced trench technology to G provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S Schematic diagram General Features VDS = -40V,ID = - A RDS(ON)

 0.1. Size:514K  cn hmsemi
 hm2319a.pdf

HM2319A P-Channel Enhancement Mode Power MOSFET D Description The HM2319A uses advanced trench technology to G provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S Schematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)

 9.1. Size:413K  chenmko
 chm2313qgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2313QGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

 9.2. Size:69K  chenmko
 chm2316gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2316GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

 9.3. Size:108K  chenmko
 chm2316qgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2316QGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6) *

 9.4. Size:352K  chenmko
 chm2310gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2310GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturati

 9.5. Size:74K  chenmko
 chm2314gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2314GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satur

 9.6. Size:90K  chenmko
 chm2313gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2313GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

 9.7. Size:154K  chenmko
 chm2313gp-a.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2313GP-A SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High s

 9.8. Size:1675K  cn vbsemi
 hm2310pr.pdf

HM2310PR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

 9.9. Size:1881K  cn vbsemi
 hm2310.pdf

HM2310 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1

 9.10. Size:723K  cn hmsemi
 hm2310b.pdf

HM2310B N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co

 9.11. Size:648K  cn hmsemi
 hm2312b.pdf

HM2312B N-Channel Enhancement Mode Power MOSFET Description D The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.12. Size:402K  cn hmsemi
 hm2318b.pdf

HM2318B N Channel Enhancement Mode MOSFET DESCRIPTION HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer

 9.13. Size:576K  cn hmsemi
 hm2310pr.pdf

HM2310PR Description The HM2310PR uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other switching application. S General Feature VDS =60V,ID =4.0A Schematic diagram RDS(ON)

 9.14. Size:555K  cn hmsemi
 hm2314.pdf

HM2314 N-Channel Enhancement Mode Power MOSFET Description D The HM2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.15. Size:476K  cn hmsemi
 hm2310.pdf

HM2310 N-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM2310 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)

 9.16. Size:554K  cn hmsemi
 hm2312.pdf

HM2312 N-Channel Enhancement Mode Power MOSFET Description D The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.17. Size:711K  cn hmsemi
 hm2314b.pdf

HM2314B N-Channel Enhancement Mode Power MOSFET Description D The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.18. Size:1351K  cn hmsemi
 hm2318apr.pdf

HM2318 N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM is the N-Channel logic enhancement mode power RDS(ON) 28m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

 9.19. Size:1187K  cn hmsemi
 hm2318a.pdf

HM2318A N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2318A is the N-Channel logic enhancement mode power RDS(ON) 28m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) min

 9.20. Size:719K  cn hmsemi
 hm2310c.pdf

HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co