FDMA7672 Datasheet. Equivalente

 ..1. Size:228K  fairchild semi
 fdma7672.pdf

April 2012 FDMA7672 Single N-Channel PowerTrench MOSFET 30 V, 9 A, 21 m Features General Description Max rDS(on) = 21 m at VGS = 10 V, ID = 9 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 32 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low Pr

 7.1. Size:216K  fairchild semi
 fdma7670.pdf

January 2012 FDMA7670 Single N-Channel PowerTrench MOSFET 30 V, 11 A, 15 m Features General Description Max rDS(on) = 15 m at VGS = 10 V, ID = 11 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 22 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching Lo

 8.1. Size:242K  fairchild semi
 fdma7628.pdf

May 2012 FDMA7628 Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 m Features General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 A optimize the rDS(ON) @ VGS = 1.5 V on specia

 8.2. Size:224K  fairchild semi
 fdma7630.pdf

September 2010 FDMA7630 Single N-Channel PowerTrench MOSFET 30 V, 11 A, 13 m Features General Description Max rDS(on) = 13 m at VGS = 10 V, ID = 11 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 20 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching

 8.3. Size:230K  fairchild semi
 fdma7632.pdf

August 2010 FDMA7632 Single N-Channel PowerTrench MOSFET 30 V, 9 A, 19 m Features General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low P

 8.4. Size:2886K  cn vbsemi
 fdma7628.pdf

FDMA7628 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6L-