HM25N06Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM25N06Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.3 nS
Cossⓘ - Capacitancia de salida: 100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: DFN3X3-8L
Búsqueda de reemplazo de HM25N06Q MOSFET
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HM25N06Q datasheet
hm25n06q.pdf
HM25N06Q Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm25n06d.pdf
HM25N06D Description The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm25n03d.pdf
HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)
hm25n08d.pdf
HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)
Otros transistores... HM2369, HM24N20, HM24N20K, HM24N20KA, HM24N50A, HM25N03D, HM25N03Q, HM25N06D, 4435, HM25N08D, HM25N50, HM25P03D, HM25P03K, HM25P03Q, HM25P04D, HM25P04K, HM25P15
History: RU20E8H
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