HM25N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM25N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 25 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 64 nC
Tiempo de subida (tr): 64.4 nS
Conductancia de drenaje-sustrato (Cd): 214 pF
Resistencia entre drenaje y fuente RDS(on): 0.27 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET HM25N50
HM25N50 Datasheet (PDF)
hm25n50.pdf
HM25N50General Description VDSS 500 V HM25N50 the silicon N-channel Enhanced ID 25 A PD(TC=25) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a
phm25nq10t.pdf
PHM25NQ10TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta
chm25n15lpagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM25N15LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 150 Volts CURRENT 25 AmpereAPPLICATION* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power and current handing capa
hm25n03d.pdf
HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)
hm25n120t.pdf
IGBT Features 1200V, 25A ,V =2.3 V@V =15V CE(sat)(typ.) GE High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description DAXINs IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute Maxinmun Ratings
hm25n08d.pdf
HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)
hm25n06q.pdf
HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm25n06d.pdf
HM25N06DDescription The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm25n03q.pdf
HM25N03QDescription The HM25N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
