HM25N50 Todos los transistores

 

HM25N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM25N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 64.4 nS
   Cossⓘ - Capacitancia de salida: 214 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET HM25N50

 

HM25N50 Datasheet (PDF)

 ..1. Size:642K  cn hmsemi
hm25n50.pdf

HM25N50
HM25N50

HM25N50General Description VDSS 500 V HM25N50 the silicon N-channel Enhanced ID 25 A PD(TC=25) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

 9.1. Size:277K  philips
phm25nq10t.pdf

HM25N50
HM25N50

PHM25NQ10TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta

 9.2. Size:62K  chenmko
chm25n15lpagp.pdf

HM25N50
HM25N50

CHENMKO ENTERPRISE CO.,LTDCHM25N15LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 150 Volts CURRENT 25 AmpereAPPLICATION* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power and current handing capa

 9.3. Size:583K  cn hmsemi
hm25n03d.pdf

HM25N50
HM25N50

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 9.4. Size:542K  cn hmsemi
hm25n120t.pdf

HM25N50
HM25N50

IGBT Features 1200V, 25A ,V =2.3 V@V =15V CE(sat)(typ.) GE High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description DAXINs IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute Maxinmun Ratings

 9.5. Size:835K  cn hmsemi
hm25n08d.pdf

HM25N50
HM25N50

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)

 9.6. Size:674K  cn hmsemi
hm25n06q.pdf

HM25N50
HM25N50

HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 9.7. Size:462K  cn hmsemi
hm25n06d.pdf

HM25N50
HM25N50

HM25N06DDescription The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 9.8. Size:547K  cn hmsemi
hm25n03q.pdf

HM25N50
HM25N50

HM25N03QDescription The HM25N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

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