HM25P15D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM25P15D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 137 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 148 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET HM25P15D

HM25P15D Datasheet (PDF)

..1. Size:820K cn hmsemi
hm25p15d.pdf

HM25P15DP-Channel Enhancement Mode Power MOSFET Description The HM25P15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-150V,ID =-25A Schematic diagram RDS(ON)

7.1. Size:588K cn hmsemi
hm25p15.pdf

HM25P15P-Channel Enhancement Mode Power MOSFET Description The HM25P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-150V,ID =-25A Schematic diagram RDS(ON)

7.2. Size:748K cn hmsemi
hm25p15k.pdf

HM25P15KP-Channel Enhancement Mode Power MOSFET Description The HM25P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-150V,ID =-25A RDS(ON)

9.1. Size:829K 1
hm25p06d.pdf

HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

9.2. Size:883K cn vbsemi
hm25p06k.pdf

HM25P06Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Con

9.3. Size:969K cn hmsemi
hm25p04k.pdf

HM25P04KP-Channel Enhancement Mode Power MOSFET Description The HM25P04K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -25A Schematic diagram RDS(ON)

9.4. Size:1222K cn hmsemi
hm25p04d.pdf

HM25P04DP-Channel Enhancement Mode Power MOSFET Description The HM25P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-25A RDS(ON)

9.5. Size:840K cn hmsemi
hm25p03k.pdf

HM25P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM25P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -25A D SRDS(ON)

9.6. Size:829K cn hmsemi
hm25p06d.pdf

9.7. Size:563K cn hmsemi
hm25p03q.pdf

P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S DSchematic diagram RDS(ON)

9.8. Size:1028K cn hmsemi
hm25p06k.pdf

HM25P06KP-Channel Enhancement Mode Power MOSFET Description The HM25P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

9.9. Size:554K cn hmsemi
hm25p03d.pdf

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