HM30P02K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM30P02K

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TO252

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HM30P02K datasheet

 ..1. Size:1112K  cn hmsemi
 hm30p02k.pdf pdf_icon

HM30P02K

P-Channel Enhancement Mode Power MOSFET D Description The uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -30A RDS(ON)

 8.1. Size:1282K  cn hmsemi
 hm30p03q.pdf pdf_icon

HM30P02K

HM30P03Q -30VDS 20VGS -30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin Description Pin Description VDSS=-30V VGSS= 20V ID=-30A RDS(ON)=14m (max.)@VGS=-10V RDS(ON)=22m (max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter

 9.1. Size:569K  cn hmsemi
 hm30p10k.pdf pdf_icon

HM30P02K

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 9.2. Size:524K  cn hmsemi
 hm30p55k.pdf pdf_icon

HM30P02K

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM30N02K, HM30N02Q, HM30N03K, HM30N04D, HM30N04Q, HM30N10, HM30N10D, HM30N10K, IRF9640, HM30P03Q, HM30P10K, HM30P55, HM30P55K, HM3205, HM3205B, HM3205D, HM3207