HM3205 Todos los transistores

 ..1. Size:587K  cn hmsemi
 hm3205.pdf

HM3205 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =120A RDS(ON)

 0.1. Size:858K  cn hmsemi
 hm3205d.pdf

HM3205D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)

 0.2. Size:703K  cn hmsemi
 hm3205b.pdf

HM3205B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)

 9.1. Size:78K  chenmko
 chm3203cmgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM3203CMGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.0 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59/SOT-346 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2)

 9.2. Size:379K  cn hmsemi
 hm3207d.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.3. Size:492K  cn hmsemi
 hm3207.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.4. Size:675K  cn hmsemi
 hm3207t.pdf

HM3207T N-Channel Enhancement Mode Power MOSFET Description The HM3207T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.5. Size:512K  cn hmsemi
 hm3207bd.pdf

HM3207BD N-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

 9.6. Size:602K  cn hmsemi
 hm3207b.pdf

HM3207B N-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)