HM3207 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM3207
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 210 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 250 nC
   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 914 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET HM3207

HM3207 Datasheet (PDF)

..1. Size:492K cn hmsemi
hm3207.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

0.1. Size:379K cn hmsemi
hm3207d.pdf

0.2. Size:675K cn hmsemi
hm3207t.pdf

HM3207TN-Channel Enhancement Mode Power MOSFET Description The HM3207T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

0.3. Size:512K cn hmsemi
hm3207bd.pdf

HM3207BDN-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

0.4. Size:602K cn hmsemi
hm3207b.pdf

HM3207BN-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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