HM3207D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM3207D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 330 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 210 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 250 nC
Tiempo de subida (tr): 190 nS
Conductancia de drenaje-sustrato (Cd): 914 pF
Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET HM3207D
HM3207D Datasheet (PDF)
hm3207d.pdf
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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207.pdf
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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207t.pdf
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HM3207TN-Channel Enhancement Mode Power MOSFET Description The HM3207T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207bd.pdf
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HM3207BDN-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)
hm3207b.pdf
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HM3207BN-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)
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