FDMC2512SDC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC2512SDC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 66 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: POWER33

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FDMC2512SDC datasheet

 ..1. Size:319K  fairchild semi
 fdmc2512sdc.pdf pdf_icon

FDMC2512SDC

July 2010 FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a

 7.1. Size:292K  fairchild semi
 fdmc2514sdc.pdf pdf_icon

FDMC2512SDC

October 2010 FDMC2514SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m

 7.2. Size:333K  onsemi
 fdmc2514sdc.pdf pdf_icon

FDMC2512SDC

FDMC2514SDC N-Channel Dual CoolTM 33 PowerTrench SyncFETTM 25 V, 40 A, 3.5 m General Description This N-Channel MOSFET is produced using ON Semiconductor s advanced PowerTrench process. Features Advancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent

 7.3. Size:857K  cn vbsemi
 fdmc2514sdc.pdf pdf_icon

FDMC2512SDC

FDMC2514SDC www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control

MOSTRAR MÁS

Otros transistores... STS2622A, FDMA7672, STS2621, FDMB3800N, STS2620A, FDMB3900AN, FDMB668P, FDMC15N06, IRFP250, FDMC2514SDC, FDMC2523P, FDMC2610, STS2620, FDMC2674, FDMC3020DC, STS2601, FDMC3612