HM3400DR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM3400DR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 6.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.8 nS

Cossⓘ - Capacitancia de salida: 99 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm

Encapsulados: DFN2X2-6L

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HM3400DR datasheet

 ..1. Size:679K  cn hmsemi
 hm3400dr.pdf pdf_icon

HM3400DR

HM3400DR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 8 A Schematic diagram RDS(ON)

 7.1. Size:474K  cn hmsemi
 hm3400d.pdf pdf_icon

HM3400DR

HM3400D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400D uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 5.0A Schematic diagram RDS(ON)

 8.1. Size:1663K  cn vbsemi
 hm3400pr.pdf pdf_icon

HM3400DR

HM3400PR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

 8.2. Size:384K  cn hmsemi
 hm3400 sot23-3l.pdf pdf_icon

HM3400DR

HM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... HM3306, HM3307, HM3307A, HM3307B, HM3400, HM3400B, HM3400C, HM3400D, IRLZ44N, HM3401, HM3401B, HM3401C, HM3401D, HM3401PR, HM3406B, HM3407A, HM3407B