HM3407B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:460K cn hmsemi
hm3407b.pdf pdf_icon

HM3407BP-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGENERAL FEATURES VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

8.1. Size:526K cn hmsemi
hm3407a.pdf pdf_icon

HM3407AP-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGENERAL FEATURES VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

9.1. Size:1663K cn vbsemi
hm3400pr.pdf pdf_icon

HM3400PRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

9.2. Size:547K cn hmsemi
hm3401.pdf pdf_icon

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

9.3. Size:588K cn hmsemi
hm3401d.pdf pdf_icon

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.6A RDS(ON)

9.4. Size:384K cn hmsemi
hm3400 sot23-3l.pdf pdf_icon

HM3400N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

9.5. Size:560K cn hmsemi
hm3401c.pdf pdf_icon

HM3401CP-Channel Enhancement Mode Power MOSFET Description DThe HM3401C uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.5A Schematic diagram RDS(ON)

9.6. Size:478K cn hmsemi
hm3400c.pdf pdf_icon

N-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)

9.7. Size:679K cn hmsemi
hm3400dr.pdf pdf_icon

HM3400DRN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 8 A Schematic diagram RDS(ON)

9.8. Size:459K cn hmsemi
hm3401b.pdf pdf_icon

HM3401B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

9.9. Size:446K cn hmsemi
hm3406b.pdf pdf_icon

HM3406BN-Channel Enhancement Mode Power MOSFET Description DThe HM3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable Gfor use as a load switch and PWM applications. SGenera Features VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

9.10. Size:474K cn hmsemi
hm3400d.pdf pdf_icon

HM3400DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400D uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.0A Schematic diagram RDS(ON)

9.11. Size:929K cn hmsemi
hm3401pr.pdf pdf_icon

HM3401PR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.2A RDS(ON)

9.12. Size:307K cn hmsemi
hm3400b.pdf pdf_icon

3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The 3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

9.13. Size:533K cn hmsemi
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