HM3416B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM3416B
Código: 3416
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 8 nC
Tiempo de subida (tr): 1 nS
Conductancia de drenaje-sustrato (Cd): 160 pF
Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET HM3416B
HM3416B Datasheet (PDF)
hm3416b.pdf
HM3416BN-Channel Enhancement Mode Power MOSFET Description The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram VDS = 20V,ID =6A RDS(ON)
chm3413kgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3413KGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88A/SOT-353FEATURE* Small flat package. (SC-88A )* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (5)* Hi
chm3413sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3413SGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. (SC-88 )* High density cell design for extremely low RDS(ON). * Rugged and reliable. (6)(1)* Hig
hm3414.pdf
HM3414N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)
hm3413b.pdf
HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)
hm3413.pdf
HM3413 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)
hm3414b.pdf
HM3414BN-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3414B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)
hm3415e.pdf
HM3415EP-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A Schematic diagram RDS(ON)
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
