HM3N120A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM3N120A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19.4 nS

Cossⓘ - Capacitancia de salida: 59.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: TO3P

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HM3N120A datasheet

 ..1. Size:610K  cn hmsemi
 hm3n120a.pdf pdf_icon

HM3N120A

HM3N120A General Description VDSS 1200 V HM3N120A ANR, the silicon N-channel Enhanced ID 3 A RDS(ON)Typ 5.1 VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi

 7.1. Size:425K  cn hmsemi
 hm3n120f.pdf pdf_icon

HM3N120A

HM3N120F General Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

 9.1. Size:941K  cn hmsemi
 hm3n10mr.pdf pdf_icon

HM3N120A

HM3N10MR N-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

 9.2. Size:422K  cn hmsemi
 hm3n150f.pdf pdf_icon

HM3N120A

HM3N150A General Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A D PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat

MOSTRAR MÁS

Otros transistores... HM35P03K, HM35P04D, HM3710, HM3710K, HM3800D, HM3808, HM3N10MR, HM3N10PR, AON7410, HM3N120F, HM3N150A, HM3N150F, HM3N25I, HM3N30PR, HM3N40PR, HM3N40R, HM3N70