HM40N15K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM40N15K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 140 W
Tensión drenaje-fuente |Vds|: 150 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 40 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4.5 V
Carga de compuerta (Qg): 105 nC
Tiempo de elevación (tr): 11.8 nS
Conductancia de drenaje-sustrato (Cd): 203 pF
Resistencia drenaje-fuente RDS(on): 0.045 Ohm
Paquete / Caja (carcasa): TO252
Búsqueda de reemplazo de MOSFET HM40N15K
HM40N15K Datasheet (PDF)
..1. hm40n15k.pdf 
Size:511K _cn_hmsemi
HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
0.1. hm40n15ka.pdf Size:608K _cn_hmsemi
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
8.1. hm40n10k.pdf Size:534K _cn_hmsemi
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
8.2. hm40n10.pdf Size:798K _cn_hmsemi
HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
8.3. hm40n10ka.pdf Size:608K _cn_hmsemi
HM40N10KAN-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF1405 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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