HM40N15K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM40N15K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.8 nS

Cossⓘ - Capacitancia de salida: 203 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO252

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HM40N15K datasheet

 ..1. Size:511K  cn hmsemi
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HM40N15K

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 0.1. Size:608K  cn hmsemi
hm40n15ka.pdf pdf_icon

HM40N15K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 8.1. Size:534K  cn hmsemi
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HM40N15K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 8.2. Size:608K  cn hmsemi
hm40n10ka.pdf pdf_icon

HM40N15K

HM40N10KA N-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

Otros transistores... HM4030, HM4030D, HM40N04D, HM40N04K, HM40N06D, HM40N10, HM40N10K, HM40N10KA, 18N50, HM40N15KA, HM40N20, HM40N20D, HM40P04K, HM40P06K, HM4110, HM4110T, HM4240