STS2601 Todos los transistores

 

STS2601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STS2601
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 101 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT26
     - Selección de transistores por parámetros

 

STS2601 Datasheet (PDF)

 ..1. Size:159K  samhop
sts2601.pdf pdf_icon

STS2601

STS2601aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.80 @ VGS=-4.5VSOT-26 package.-20V -4.0A110 @ VGS=-2.5VSOT 26DTop ViewD D1 6GD 2 5 D34G SS(TA=25C unless otherwise noted)ABSOLUTE MAXIM

 9.1. Size:724K  st
sts26n3llh6.pdf pdf_icon

STS2601

STS26N3LLH6N-channel 30 V, 0.0038 , 26 A, SO-8STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax5678STS26N3LLH6 30 V 0.0044 26 A RDS(on) * Qg industry benchmark432 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSO-8 Low gate drive power losses Very low switching gate chargeApplications Swi

 9.2. Size:119K  samhop
sts2620a.pdf pdf_icon

STS2601

STS2620AaS mHop Microelectronics C orp.Ver1.2Dual Enhancement Mode Field Effect Transistor (N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)VDSS ID RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID50 @ VGS=4.5V 106 @ VGS=-4.5V20V 2.5A -20V -2A76 @ VGS=2.5V 198 @ VGS=-2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S2S12 534G2D2S 1S 2

 9.3. Size:121K  samhop
sts2621.pdf pdf_icon

STS2601

S TS 2621S amHop Microelectronics C orp.J un.6 2005Dual P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MAXR ugged and reliable.130 @ VG S = -4.5V-20V -2AS OT-26 Package.190 @ VG S = -2.5VD1 D2TS OP6Top ViewG1D161S 1 2 5 S 2G1 G234G2D2

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SDU04N60 | MTN50N06E3 | CPC3730 | G30N03D3 | SSFT4004 | SM3116NAF | IPI051N15N5

 

 
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