HM4264 Todos los transistores

 ..1. Size:524K  cn hmsemi
 hm4264.pdf

HM4264 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)

 0.1. Size:689K  cn hmsemi
 hm4264b.pdf

HM4264B N-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =1 A RDS(ON)

 9.1. Size:131K  chenmko
 chm4269jgp.pdf

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM4269JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 40 Volts CURRENT 6.1 Ampere P-channel VOLTAGE 40 Volts CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low

 9.2. Size:119K  chenmko
 chm4269pa4gp.pdf

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM4269PA4GP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 40 Volts CURRENT 14 Ampere P-channel VOLTAGE 40 Volts CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252-4 FEATURE * Small flat package. (TO-252-4) .280 (7.10) .094 (2.40) * Super high dense c

 9.3. Size:840K  cn hmsemi
 hm4260.pdf

HM4260 N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =19A Schematic diagram RDS(ON)