NVHL055N60S5F Todos los transistores

DATA SHEET www.onsemi.com MOSFET Power, Single VDSS RDS(ON) MAX ID MAX 600 V 55 mW @ 10 V 45 A N-Channel, SUPERFET) V, FRFET), TO247-3L D 600 V, 55 mW, 45 A NVHL055N60S5F Description G The SUPERFET V MOSFET FRFET series has optimized body diode performance characteristics. This can allow for the removal of components in the application and improve application performance S a

MOSFET Power, N Channel, SUPERFET III, FRFET 650 V, 58 A, 50 mW NVHL050N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored

NVHL072N65S3 MOSFET Power, N-Channel, SUPERFET) III, Automotive, Easy-drive 650 V, 44 A, 72 mW www.onsemi.com Description SuperFET III MOSFET is ON Semiconductor s brand-new high BVDSS RDS(on) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate 650 V 72 m @ 10 V 44 A charge performa

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NVHL027N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailore

MOSFET - SiC Power, Single N-Channel 900 V, 60 mW, 46 A NVHL060N090SC1 Features Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 87 nC) Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX Qualified According to AEC-Q101 900 V 84 mW @ 15 V 46 A

NVHL040N65S3F MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 40 mW @ 10 V 65 A charge performance. This advance

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 40 A, 82 mW NVHL082N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored

MOSFET - SiC Power, Single N-Channel NVHL020N120SC1 1200 V, 20 mW, 103 A Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 203 nC) Low Effective Output Capacitance (typ. Coss = 260 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 28 mW @ 20 V 103 A These Devices are RoHS Compliant Typical

MOSFET - SiC Power, Single N-Channel 1200 V, 80 mW, 31 A NVHL080N120SC1 Features Typ. RDS(on) = 80 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS Compliant Typical Ap

MOSFET - SiC Power, Single N-Channel 1200 V, 80 mW, 31 A NVHL080N120SC1A Features Typ. RDS(on) = 80 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS Compliant Typical A

NVHL025N65S3 MOSFET Power, N-Channel, Automotive SUPERFET) III, Easy-drive 650 V, 75 A, 25 mW www.onsemi.com Description BVDSS RDS(on) MAX ID MAX SuperFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 25 m @ 10 V 75 A balance technology for outstanding low on-resistance and lower gate charge performan