NVHL055N60S5F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVHL055N60S5F

Código: V055N60S5F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 278 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 45 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4.8 V

Carga de compuerta (Qg): 85.2 nC

Tiempo de elevación (tr): 26.2 nS

Conductancia de drenaje-sustrato (Cd): 72.9 pF

Resistencia drenaje-fuente RDS(on): 0.055 Ohm

Paquete / Caja (carcasa): TO247

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NVHL055N60S5F Datasheet (PDF)

..1. nvhl055n60s5f.pdf Size:355K _1

DATA SHEETwww.onsemi.comMOSFET Power, SingleVDSS RDS(ON) MAX ID MAX600 V 55 mW @ 10 V 45 AN-Channel, SUPERFET) V,FRFET), TO247-3LD600 V, 55 mW, 45 ANVHL055N60S5FDescriptionGThe SUPERFET V MOSFET FRFET series has optimized bodydiode performance characteristics. This can allow for the removal ofcomponents in the application and improve application performanceSa

8.1. nvhl050n65s3hf.pdf Size:355K _onsemi

MOSFET Power,NChannel, SUPERFET III,FRFET650 V, 58 A, 50 mWNVHL050N65S3HFwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored

9.1. nvhl080n120sc1.pdf Size:371K _onsemi

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANVHL080N120SC1Features Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS CompliantTypical Ap

9.2. nvhl027n65s3f.pdf Size:601K _onsemi

MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 75 A, 27.4 mWNVHL027N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

9.3. nvhl060n090sc1.pdf Size:769K _onsemi

MOSFET - SiC Power, SingleN-Channel900 V, 60 mW, 46 ANVHL060N090SC1Features Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 Vwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 87 nC) Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX Qualified According to AEC-Q101900 V 84 mW @ 15 V 46 A

9.4. nvhl080n120sc1a.pdf Size:368K _onsemi

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANVHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS CompliantTypical A

9.5. nvhl040n65s3f.pdf Size:371K _onsemi

NVHL040N65S3FMOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 65 A, 40 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 40 mW @ 10 V 65 Acharge performance. This advance

9.6. nvhl072n65s3.pdf Size:322K _onsemi

NVHL072N65S3MOSFET Power,N-Channel, SUPERFET) III,Automotive, Easy-drive650 V, 44 A, 72 mWwww.onsemi.comDescriptionSuperFET III MOSFET is ON Semiconductors brand-new highBVDSS RDS(on) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 72 m @ 10 V 44 Acharge performa

9.7. nvhl020n120sc1.pdf Size:308K _onsemi

MOSFET - SiC Power, SingleN-ChannelNVHL020N120SC11200 V, 20 mW, 103 AFeatures Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 203 nC) Low Effective Output Capacitance (typ. Coss = 260 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 28 mW @ 20 V 103 A These Devices are RoHS CompliantTypical

9.8. nvhl082n65s3f.pdf Size:377K _onsemi

MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 40 A, 82 mWNVHL082N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

9.9. nvhl025n65s3.pdf Size:393K _onsemi

NVHL025N65S3MOSFET Power,N-Channel, AutomotiveSUPERFET) III, Easy-drive650 V, 75 A, 25 mWwww.onsemi.comDescriptionBVDSS RDS(on) MAX ID MAXSuperFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 25 m @ 10 V 75 Abalance technology for outstanding low on-resistance and lower gatecharge performan

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