OSG60R074FZF Todos los transistores

 

OSG60R074FZF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG60R074FZF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 98.1 nS

Cossⓘ - Capacitancia de salida: 350.1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm

Encapsulados: TO220F

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OSG60R074FZF datasheet

 ..1. Size:1106K  1
osg60r074hzf osg60r074fzf.pdf pdf_icon

OSG60R074FZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 ..2. Size:1017K  oriental semi
osg60r074fzf.pdf pdf_icon

OSG60R074FZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 4.1. Size:923K  oriental semi
osg60r074fszf.pdf pdf_icon

OSG60R074FZF

OSG60R074FSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.1. Size:924K  oriental semi
osg60r074hszf.pdf pdf_icon

OSG60R074FZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

Otros transistores... HM4302 , HM4302B , 2SK68A , CRJF390N65GC , HCA60R150T , MDP10N027TH , NVHL055N60S5F , OSG60R074HZF , IRF830 , SRC60R078BTF , SRC60R078BT , SRC60R078BS2 , STK0825F , CS25N50AKR , HYG042N10NS1P , HYG042N10NS1B , SUP75N06-08 .

History: AP3N2R8H | 2SJ0582 | 15N05 | 2SK2975 | JMH65R600MK | NCE60R360 | AP3P6R0S

 

 

 

 

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