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OSG60R074FZF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG60R074FZF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 98.1 nS
   Cossⓘ - Capacitancia de salida: 350.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm
   Paquete / Cubierta: TO220F
 

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OSG60R074FZF Datasheet (PDF)

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OSG60R074FZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 ..2. Size:1017K  oriental semi
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OSG60R074FZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 4.1. Size:923K  oriental semi
 osg60r074fszf.pdf pdf_icon

OSG60R074FZF

OSG60R074FSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.1. Size:924K  oriental semi
 osg60r074hszf.pdf pdf_icon

OSG60R074FZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

MOSTRAR MÁS

Otros transistores... HM4302 , HM4302B , 2SK68A , CRJF390N65GC , HCA60R150T , MDP10N027TH , NVHL055N60S5F , OSG60R074HZF , IRF1405 , SRC60R078BTF , SRC60R078BT , SRC60R078BS2 , STK0825F , CS25N50AKR , HYG042N10NS1P , HYG042N10NS1B , SUP75N06-08 .

History: NCEAP40P80K | 2SK3537-01MR | UT3N06G-AB3-R | BSC12DN20NS3G | 2SK134 | 2SJ476-01S | UPA2463T1Q

 

 
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