HM4435 Todos los transistores

 ..1. Size:450K  cn hmsemi
 hm4435.pdf

HM4435 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM4435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -9.1A RDS(ON)

 0.1. Size:184K  chenmko
 chm4435ajgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4435AJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and reli

 0.2. Size:102K  chenmko
 chm4435bjgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4435BJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and reli

 0.3. Size:101K  chenmko
 chm4435azgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4435AZGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. (SOT-223 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0.05 2.0+

 0.4. Size:481K  cn hmsemi
 hm4435b.pdf

HM4435B P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM4435B uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -9.1A RDS(ON)