HM4441A Todos los transistores

 ..1. Size:664K  cn hmsemi
 hm4441a.pdf

HM4441A N Channel Enhancement Mode MOSFET SCRIPTION HM4441A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther bat

 8.1. Size:550K  cn hmsemi
 hm4441.pdf

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)

 9.1. Size:368K  cn hmsemi
 hm4447.pdf

HM4447 Description The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

 9.2. Size:753K  cn hmsemi
 hm4440a.pdf

HM4440A N-Channel Enhancement Mode Power MOSFET Description The HM4440A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A Schematic diagram RDS(ON)

 9.3. Size:783K  cn hmsemi
 hm4444.pdf

HM4444 N-Channel Enhancement Mode Power MOSFET Description The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =12.5A RDS(ON)

 9.4. Size:527K  cn hmsemi
 hm4443.pdf

HM4443 P-Channel Enhancement Mode Power MOSFET D Description The HM4443 uses advanced trench technology to G provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S Schematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)

 9.5. Size:436K  cn hmsemi
 hm4440.pdf

HM4440 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4440 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A RDS(ON)

 9.6. Size:631K  cn hmsemi
 hm4449.pdf

HM4449 P-Channel Enhancement Mode Power MOSFET D Description The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -7A RDS(ON)