HM4484 Todos los transistores

 

HM4484 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM4484
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 3 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 15 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 29 nC
   Tiempo de subida (tr): 17.2 nS
   Conductancia de drenaje-sustrato (Cd): 280 pF
   Resistencia entre drenaje y fuente RDS(on): 0.013 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET HM4484

 

HM4484 Datasheet (PDF)

 ..1. Size:836K  cn hmsemi
hm4484.pdf

HM4484 HM4484

HM4484 N-Channel Enhancement Mode Power MOSFET Description The HM4484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =15A RDS(ON)

 9.1. Size:458K  cn hmsemi
hm4485.pdf

HM4484 HM4484

HM4485Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

 9.2. Size:747K  cn hmsemi
hm4487b.pdf

HM4484 HM4484

HM4487B P-Channel Enhancement Mode Power MOSFET Description DThe HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-3.5A Schematic diagram RDS(ON)

 9.3. Size:668K  cn hmsemi
hm4485a.pdf

HM4484 HM4484

HM4485ADescription The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-17.5A RDS(ON)

 9.4. Size:1694K  cn hmsemi
hm4486e.pdf

HM4484 HM4484

HM4486E 100VDS20VGS3.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=3.5A Pin Description RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

 9.5. Size:593K  cn hmsemi
hm4480.pdf

HM4484 HM4484

HM4480N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =10A RDS(ON)

 9.6. Size:827K  cn hmsemi
hm4486a.pdf

HM4484 HM4484

HM4486AN-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A RDS(ON)

 9.7. Size:769K  cn hmsemi
hm4487a.pdf

HM4484 HM4484

HM4487A P-Channel Enhancement Mode Power MOSFET Description DThe HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-7.5A Schematic diagram RDS(ON)

 9.8. Size:650K  cn hmsemi
hm4487.pdf

HM4484 HM4484

HM4487 P-Channel Enhancement Mode Power MOSFET Description DThe HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

 9.9. Size:2069K  cn hmsemi
hm4482.pdf

HM4484 HM4484

HM4482 100VDS20VGS2.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=2.5A RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=115m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Waveforms HSOP-8 top view HM4482 HM4482 SOP-8 - - -Rev. A.0

 9.10. Size:577K  cn hmsemi
hm4485b.pdf

HM4484 HM4484

HM4485BP-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -7.5A Schematic diagram RDS(ON)

 9.11. Size:530K  cn hmsemi
hm4488.pdf

HM4484 HM4484

N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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