HM4487 Todos los transistores

 ..1. Size:650K  cn hmsemi
 hm4487.pdf

HM4487 P-Channel Enhancement Mode Power MOSFET Description D The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

 0.1. Size:747K  cn hmsemi
 hm4487b.pdf

HM4487B P-Channel Enhancement Mode Power MOSFET Description D The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-3.5A Schematic diagram RDS(ON)

 0.2. Size:769K  cn hmsemi
 hm4487a.pdf

HM4487A P-Channel Enhancement Mode Power MOSFET Description D The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-7.5A Schematic diagram RDS(ON)

 9.1. Size:458K  cn hmsemi
 hm4485.pdf

HM4485 Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

 9.2. Size:668K  cn hmsemi
 hm4485a.pdf

HM4485A Description The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-17.5A RDS(ON)

 9.3. Size:1694K  cn hmsemi
 hm4486e.pdf

HM4486E 100VDS 20VGS 3.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=3.5A Pin Description RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=175m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

 9.4. Size:593K  cn hmsemi
 hm4480.pdf

HM4480 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =10A RDS(ON)

 9.5. Size:836K  cn hmsemi
 hm4484.pdf

HM4484 N-Channel Enhancement Mode Power MOSFET Description The HM4484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =15A RDS(ON)

 9.6. Size:827K  cn hmsemi
 hm4486a.pdf

HM4486A N-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A RDS(ON)

 9.7. Size:2069K  cn hmsemi
 hm4482.pdf

HM4482 100VDS 20VGS 2.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=2.5A RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=115m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Waveforms H SOP-8 top view HM4482 HM4482 SOP-8 - - - Rev. A.0

 9.8. Size:577K  cn hmsemi
 hm4485b.pdf

HM4485B P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -7.5A Schematic diagram RDS(ON)

 9.9. Size:530K  cn hmsemi
 hm4488.pdf

N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A RDS(ON)