HM4487B Todos los transistores

HM4487B P-Channel Enhancement Mode Power MOSFET Description D The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-3.5A Schematic diagram RDS(ON)

HM4487A P-Channel Enhancement Mode Power MOSFET Description D The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-7.5A Schematic diagram RDS(ON)

HM4487 P-Channel Enhancement Mode Power MOSFET Description D The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

HM4485 Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

HM4485A Description The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-17.5A RDS(ON)

HM4486E 100VDS 20VGS 3.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=3.5A Pin Description RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=175m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

HM4480 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =10A RDS(ON)

HM4484 N-Channel Enhancement Mode Power MOSFET Description The HM4484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =15A RDS(ON)

HM4486A N-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A RDS(ON)

HM4482 100VDS 20VGS 2.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=2.5A RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=115m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Waveforms H SOP-8 top view HM4482 HM4482 SOP-8 - - - Rev. A.0

HM4485B P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -7.5A Schematic diagram RDS(ON)

N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A RDS(ON)