HM4487B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM4487B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 61 nC
   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET HM4487B

HM4487B Datasheet (PDF)

..1. Size:747K cn hmsemi
hm4487b.pdf

HM4487B P-Channel Enhancement Mode Power MOSFET Description DThe HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-3.5A Schematic diagram RDS(ON)

8.1. Size:769K cn hmsemi
hm4487a.pdf

HM4487A P-Channel Enhancement Mode Power MOSFET Description DThe HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-7.5A Schematic diagram RDS(ON)

8.2. Size:650K cn hmsemi
hm4487.pdf

HM4487 P-Channel Enhancement Mode Power MOSFET Description DThe HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

9.1. Size:458K cn hmsemi
hm4485.pdf

HM4485Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

9.2. Size:668K cn hmsemi
hm4485a.pdf

HM4485ADescription The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-17.5A RDS(ON)

9.3. Size:1694K cn hmsemi
hm4486e.pdf

HM4486E 100VDS20VGS3.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=3.5A Pin Description RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

9.4. Size:593K cn hmsemi
hm4480.pdf

HM4480N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =10A RDS(ON)

9.5. Size:836K cn hmsemi
hm4484.pdf

HM4484 N-Channel Enhancement Mode Power MOSFET Description The HM4484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =15A RDS(ON)

9.6. Size:827K cn hmsemi
hm4486a.pdf

HM4486AN-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A RDS(ON)

9.7. Size:2069K cn hmsemi
hm4482.pdf

HM4482 100VDS20VGS2.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=2.5A RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=115m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Waveforms HSOP-8 top view HM4482 HM4482 SOP-8 - - -Rev. A.0

9.8. Size:577K cn hmsemi
hm4485b.pdf

HM4485BP-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -7.5A Schematic diagram RDS(ON)

9.9. Size:530K cn hmsemi
hm4488.pdf

N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A RDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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