HM45N02D Todos los transistores

 

HM45N02D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM45N02D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17.2 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: DFN5X6-8
 

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HM45N02D Datasheet (PDF)

 ..1. Size:1168K  cn hmsemi
 hm45n02d.pdf pdf_icon

HM45N02D

HM45N02DDescription The HM45N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)

 7.1. Size:972K  cn hmsemi
 hm45n02q.pdf pdf_icon

HM45N02D

HM45N02QDescription The HM45N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)

 8.1. Size:669K  cn hmsemi
 hm45n06d.pdf pdf_icon

HM45N02D

HM45N06D N-Channel Enhancement Mode Power MOSFET Description The HM45N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =35A RDS(ON)

Otros transistores... HM4486A , HM4486E , HM4487 , HM4487A , HM4487B , HM4488 , HM4490 , HM4503 , 4N60 , HM45N02Q , HM45N06D , HM45P02D , HM45P02Q , HM45P03K , HM4606 , HM4606A , HM4606B .

History: PJS6405 | CS18N50F | UPA2754GR

 

 
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