FDMC6675BZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMC6675BZ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 46 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0144 Ohm
   Paquete / Cubierta: POWER33

Búsqueda de reemplazo de MOSFET FDMC6675BZ

FDMC6675BZ Datasheet (PDF)

..1. Size:327K fairchild semi
fdmc6675bz.pdf

September 2010FDMC6675BZP-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m Features General Description Max rDS(on) = 14.4 m at VGS = -10 V, ID = -9.5 A The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and Max rDS(on) = 27.0 m at VGS = -4.5 V, ID = -6.9 Apackage technologies have been combined to offer the lowest

7.1. Size:299K fairchild semi
fdmc6679az.pdf

July 2009FDMC6679AZP-Channel PowerTrench MOSFET -30 V, -20 A, 10 mFeatures General DescriptionThe FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 Aload switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 Apackage technologies have been combined to offer the lowest rD

8.1. Size:433K fairchild semi
fdmc6688p.pdf

February 2015FDMC6688PP-Channel PowerTrench MOSFET-20 V, -56 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =

8.2. Size:253K fairchild semi
fdmc6686p.pdf

February 2015FDMC6686PP-Channel PowerTrench MOSFET-20 V, -56 A, 4 mFeatures General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =11.5

8.3. Size:327K onsemi
fdmc6686p.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: