HM45P03K Todos los transistores

 

HM45P03K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM45P03K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO252
 

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HM45P03K Datasheet (PDF)

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HM45P03K

HM45P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM45P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -45A D SRDS(ON)

 8.1. Size:731K  cn hmsemi
 hm45p02d.pdf pdf_icon

HM45P03K

HM45P02DP-Channel Enhancement Mode Power MOSFET Description The HM45P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A RDS(ON)

 8.2. Size:548K  cn hmsemi
 hm45p02q.pdf pdf_icon

HM45P03K

HM45P02QP-Channel Enhancement Mode Power MOSFET Description The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A Schematic diagram RDS(ON)

Otros transistores... HM4488 , HM4490 , HM4503 , HM45N02D , HM45N02Q , HM45N06D , HM45P02D , HM45P02Q , AO4407 , HM4606 , HM4606A , HM4606B , HM4606C , HM4606D , HM4611 , HM4611A , HM4611B .

History: CS18N20BB | PPMT20V4E | 2SK3403K

 

 
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