HM4606C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM4606C
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 5.2 nC
   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET HM4606C

HM4606C Datasheet (PDF)

..1. Size:1907K cn hmsemi
hm4606c.pdf

HM4606CN and P-Channel Enhancement Mode Power MOSFET Description The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)

8.1. Size:679K cn hmsemi
hm4606d.pdf

HM4606DN and P-Channel Enhancement Mode Power MOSFET Description The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

8.2. Size:922K cn hmsemi
hm4606b.pdf

HM4606BN and P-Channel Enhancement Mode Power MOSFET Description The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

8.3. Size:1544K cn hmsemi
hm4606.pdf

HM4606N and P-Channel Enhancement Mode Power MOSFET Description The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 30V,ID =7.0A Schematic diagram RDS(ON)

8.4. Size:813K cn hmsemi
hm4606a.pdf

HM4606AN and P-Channel Enhancement Mode Power MOSFET Description The HM4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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