HM4611A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM4611A
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 8.5 nC
   trⓘ - Tiempo de subida: 2.3 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET HM4611A

HM4611A Datasheet (PDF)

..1. Size:1105K cn hmsemi
hm4611a.pdf

HM4611AN and P-Channel Enhancement Mode Power MOSFET Description The HM4611A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . It can be used in a wide variety of applications.General Features N-Channel N-channel P-channelVDS = 60V,ID =9.0A Schematic diagram RDS(ON)

8.1. Size:949K cn hmsemi
hm4611.pdf

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . General Features N-Channel N-channel P-channelVDS = V,ID = Schematic diagram RDS(ON)

8.2. Size:709K cn hmsemi
hm4611b.pdf

HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 60V,ID =6.3A RDS(ON)

9.1. Size:830K cn hmsemi
hm4618b.pdf

HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =40V,ID =8A Schematic diagram RDS(ON)

9.2. Size:753K cn hmsemi
hm4612d.pdf

HM4612DN and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS =12V,ID =5A RDS(ON)

9.3. Size:715K cn hmsemi
hm4612.pdf

HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET NP MOS N-CH VDS= 60V P-CH VDS= - 60V RDS(ON), Vgs@10V, Ids@4.5A = 48m RDS(ON), Vgs@-10V, Ids@-3.2A = 110mRDS(ON), Vgs@4.5V, Ids@3A = 60m RDS(ON), Vgs@-4.5V, Ids@-2.8A = 140mFeatures Advanced trench process technology High Density Cell Design For Ultra Low On-Resistan

9.4. Size:812K cn hmsemi
hm4614.pdf

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 40V,ID =7A Schematic diagram RDS(ON)

9.5. Size:1361K cn hmsemi
hm4614b.pdf

HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET NP MOS N-CH VDS= 40V P-CH VDS= - 40V RDS(ON), Vgs@10V, Ids@6.0A = 31m RDS(ON), Vgs@-10V, Ids@-5.0A = 45m RDS(ON), Vgs@4.5V, Ids@5.0A= 45m RDS(ON), Vgs@-4.5V, Ids@-4.0A = 63m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resist

9.6. Size:980K cn hmsemi
hm4618.pdf

HM4618N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel Schematic diagram VDS = 40V,ID =10A RDS(ON)

9.7. Size:659K cn hmsemi
hm4618sp.pdf

HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The HM4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It Common-drain type is ESD protected. This device is

9.8. Size:874K cn hmsemi
hm4616a.pdf

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channelGeneral Features N-Channel

9.9. Size:922K cn hmsemi
hm4615.pdf

HM4615N and P-Channel Enhancement Mode Power MOSFET Description The HM4615 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channelGeneral Features N-Channel Sc

9.10. Size:579K cn hmsemi
hm4616.pdf

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