HM4612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM4612
Código: 4612
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 13 nC
Tiempo de subida (tr): 4.4 nS
Conductancia de drenaje-sustrato (Cd): 53 pF
Resistencia entre drenaje y fuente RDS(on): 0.048 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET HM4612
HM4612 Datasheet (PDF)
hm4612.pdf
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HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET NP MOS N-CH VDS= 60V P-CH VDS= - 60V RDS(ON), Vgs@10V, Ids@4.5A = 48m RDS(ON), Vgs@-10V, Ids@-3.2A = 110mRDS(ON), Vgs@4.5V, Ids@3A = 60m RDS(ON), Vgs@-4.5V, Ids@-2.8A = 140mFeatures Advanced trench process technology High Density Cell Design For Ultra Low On-Resistan
hm4612d.pdf
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HM4612DN and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS =12V,ID =5A RDS(ON)
hm4618b.pdf
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HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =40V,ID =8A Schematic diagram RDS(ON)
hm4614.pdf
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N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 40V,ID =7A Schematic diagram RDS(ON)
hm4614b.pdf
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HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET NP MOS N-CH VDS= 40V P-CH VDS= - 40V RDS(ON), Vgs@10V, Ids@6.0A = 31m RDS(ON), Vgs@-10V, Ids@-5.0A = 45m RDS(ON), Vgs@4.5V, Ids@5.0A= 45m RDS(ON), Vgs@-4.5V, Ids@-4.0A = 63m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resist
hm4618.pdf
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HM4618N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel Schematic diagram VDS = 40V,ID =10A RDS(ON)
hm4618sp.pdf
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HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The HM4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It Common-drain type is ESD protected. This device is
hm4611.pdf
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N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . General Features N-Channel N-channel P-channelVDS = V,ID = Schematic diagram RDS(ON)
hm4616a.pdf
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N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channelGeneral Features N-Channel
hm4611a.pdf
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HM4611AN and P-Channel Enhancement Mode Power MOSFET Description The HM4611A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . It can be used in a wide variety of applications.General Features N-Channel N-channel P-channelVDS = 60V,ID =9.0A Schematic diagram RDS(ON)
hm4611b.pdf
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HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 60V,ID =6.3A RDS(ON)
hm4615.pdf
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HM4615N and P-Channel Enhancement Mode Power MOSFET Description The HM4615 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channelGeneral Features N-Channel Sc
hm4616.pdf
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N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channelGeneral Features N-Channel
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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