FDMC6679AZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC6679AZ  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: POWER33

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FDMC6679AZ datasheet

 ..1. Size:299K  fairchild semi
 fdmc6679az.pdf pdf_icon

FDMC6679AZ

July 2009 FDMC6679AZ P-Channel PowerTrench MOSFET -30 V, -20 A, 10 m Features General Description The FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 A load switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 A package technologies have been combined to offer the lowest rD

 7.1. Size:327K  fairchild semi
 fdmc6675bz.pdf pdf_icon

FDMC6679AZ

September 2010 FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m Features General Description Max rDS(on) = 14.4 m at VGS = -10 V, ID = -9.5 A The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and Max rDS(on) = 27.0 m at VGS = -4.5 V, ID = -6.9 A package technologies have been combined to offer the lowest

 8.1. Size:433K  fairchild semi
 fdmc6688p.pdf pdf_icon

FDMC6679AZ

February 2015 FDMC6688P P-Channel PowerTrench MOSFET -20 V, -56 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 A been optimized for rDS(ON), switching performance and Max rDS(on) =

 8.2. Size:253K  fairchild semi
 fdmc6686p.pdf pdf_icon

FDMC6679AZ

February 2015 FDMC6686P P-Channel PowerTrench MOSFET -20 V, -56 A, 4 m Features General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 A been optimized for rDS(ON), switching performance and Max rDS(on) =11.5

MOSTRAR MÁS

Otros transistores... FDMC3612, STS2309A, FDMC4435BZ, FDMC510P, FDMC5614P, FDMC6296, STS2308A, FDMC6675BZ, P60NF06, FDMC6890NZ, FDMC7570S, FDMC7572S, FDMC7660, STS2307, STS2306E, FDMC7660DC, FDMC7660S