HM4612D Todos los transistores

 

HM4612D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM4612D
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: DFN2X2-6L
 

 Búsqueda de reemplazo de HM4612D MOSFET

   - Selección ⓘ de transistores por parámetros

 

HM4612D Datasheet (PDF)

 ..1. Size:753K  cn hmsemi
hm4612d.pdf pdf_icon

HM4612D

HM4612DN and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS =12V,ID =5A RDS(ON)

 8.1. Size:715K  cn hmsemi
hm4612.pdf pdf_icon

HM4612D

HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET NP MOS N-CH VDS= 60V P-CH VDS= - 60V RDS(ON), Vgs@10V, Ids@4.5A = 48m RDS(ON), Vgs@-10V, Ids@-3.2A = 110mRDS(ON), Vgs@4.5V, Ids@3A = 60m RDS(ON), Vgs@-4.5V, Ids@-2.8A = 140mFeatures Advanced trench process technology High Density Cell Design For Ultra Low On-Resistan

 9.1. Size:830K  cn hmsemi
hm4618b.pdf pdf_icon

HM4612D

HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =40V,ID =8A Schematic diagram RDS(ON)

 9.2. Size:812K  cn hmsemi
hm4614.pdf pdf_icon

HM4612D

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 40V,ID =7A Schematic diagram RDS(ON)

Otros transistores... HM4606A , HM4606B , HM4606C , HM4606D , HM4611 , HM4611A , HM4611B , HM4612 , STF13NM60N , HM4614 , HM4614B , HM4615 , HM4616 , HM4616A , HM4618 , HM4618B , HM4618SP .

 

 
Back to Top

 


HM4612D
  HM4612D
  HM4612D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20

 

 

 
Back to Top

 

Popular searches

tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent | 2n3569 | 2sd667

 


 
.