HM4614B Todos los transistores

 ..1. Size:1361K  cn hmsemi
 hm4614b.pdf

HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS N-CH VDS= 40V P-CH VDS= - 40V RDS(ON), Vgs@10V, Ids@6.0A = 31m RDS(ON), Vgs@-10V, Ids@-5.0A = 45m RDS(ON), Vgs@4.5V, Ids@5.0A= 45m RDS(ON), Vgs@-4.5V, Ids@-4.0A = 63m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resist

 8.1. Size:812K  cn hmsemi
 hm4614.pdf

 9.1. Size:830K  cn hmsemi
 hm4618b.pdf

HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =40V,ID =8A Schematic diagram RDS(ON)

 9.2. Size:753K  cn hmsemi
 hm4612d.pdf

HM4612D N and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS =12V,ID =5A RDS(ON)

 9.3. Size:715K  cn hmsemi
 hm4612.pdf

HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS N-CH VDS= 60V P-CH VDS= - 60V RDS(ON), Vgs@10V, Ids@4.5A = 48m RDS(ON), Vgs@-10V, Ids@-3.2A = 110m RDS(ON), Vgs@4.5V, Ids@3A = 60m RDS(ON), Vgs@-4.5V, Ids@-2.8A = 140m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistan

 9.4. Size:980K  cn hmsemi
 hm4618.pdf

HM4618 N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel Schematic diagram VDS = 40V,ID =10A RDS(ON)

 9.5. Size:659K  cn hmsemi
 hm4618sp.pdf

HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The HM4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It Common-drain type is ESD protected. This device is

 9.6. Size:949K  cn hmsemi
 hm4611.pdf

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . General Features N-Channel N-channel P-channel VDS = V,ID = Schematic diagram RDS(ON)

 9.7. Size:874K  cn hmsemi
 hm4616a.pdf

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channel General Features N-Channel

 9.8. Size:1105K  cn hmsemi
 hm4611a.pdf

HM4611A N and P-Channel Enhancement Mode Power MOSFET Description The HM4611A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . It can be used in a wide variety of applications. General Features N-Channel N-channel P-channel VDS = 60V,ID =9.0A Schematic diagram RDS(ON)

 9.9. Size:709K  cn hmsemi
 hm4611b.pdf

HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 60V,ID =6.3A RDS(ON)

 9.10. Size:922K  cn hmsemi
 hm4615.pdf

HM4615 N and P-Channel Enhancement Mode Power MOSFET Description The HM4615 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channel General Features N-Channel Sc

 9.11. Size:579K  cn hmsemi
 hm4616.pdf

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channel General Features N-Channel