HM4805B Todos los transistores

 ..1. Size:771K  cn hmsemi
 hm4805b.pdf

HM4805B Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM4805B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON) =11.5m

 8.1. Size:651K  cn hmsemi
 hm4805a.pdf

HM4805A Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM4805A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

 9.1. Size:91K  chenmko
 chm4804ajgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4804AJGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged a

 9.2. Size:100K  chenmko
 chm4808jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4808JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and

 9.3. Size:64K  chenmko
 chm4800ajgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4800AJGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 9.4. Size:91K  chenmko
 chm4804jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4804JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an

 9.5. Size:680K  cn hmsemi
 hm4806c.pdf

HM4806C Dual N-Channel Enhancement Mode Power MOSFET Description The HM4806C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

 9.6. Size:695K  cn hmsemi
 hm4806b.pdf

HM4806B Dual N-Channel Enhancement Mode Power MOSFET Description The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)

 9.7. Size:548K  cn hmsemi
 hm4803 sop8.pdf

HM4803 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4803 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)

 9.8. Size:536K  cn hmsemi
 hm4806a.pdf

HM Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A Schematic diagram RDS(ON)