HM4806B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM4806B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 402 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET HM4806B

HM4806B Datasheet (PDF)

..1. Size:695K cn hmsemi
hm4806b.pdf

HM4806BDual N-Channel Enhancement Mode Power MOSFET Description The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)

8.1. Size:680K cn hmsemi
hm4806c.pdf

HM4806CDual N-Channel Enhancement Mode Power MOSFET Description The HM4806C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

8.2. Size:536K cn hmsemi
hm4806a.pdf

HM Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A Schematic diagram RDS(ON)

9.1. Size:91K chenmko
chm4804ajgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4804AJGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged a

9.2. Size:100K chenmko
chm4808jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4808JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and

9.3. Size:64K chenmko
chm4800ajgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4800AJGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

9.4. Size:91K chenmko
chm4804jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4804JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

9.5. Size:771K cn hmsemi
hm4805b.pdf

HM4805BDual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4805B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON) =11.5m

9.6. Size:548K cn hmsemi
hm4803 sop8.pdf

HM4803Dual P-Channel Enhancement Mode Power MOSFET Description The HM4803 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)

9.7. Size:651K cn hmsemi
hm4805a.pdf

HM4805ADual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4805A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

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