HM4821 Todos los transistores

 

HM4821 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM4821
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 719 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

HM4821 Datasheet (PDF)

 ..1. Size:1459K  cn hmsemi
hm4821.pdf pdf_icon

HM4821

HM4821Dual P-Channel Enhancement Mode Power MOSFET Description The HM4821 uses advanced trench technology and D1D2design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. G1 G2General Features S1 S2 VDS =-60V,ID =-6.5A Schematic diagram RDS(ON)

 9.1. Size:635K  cn hmsemi
hm4822b.pdf pdf_icon

HM4821

HM4822B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)

 9.2. Size:693K  cn hmsemi
hm4826.pdf pdf_icon

HM4821

HM4826 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =9A RDS(ON)

 9.3. Size:617K  cn hmsemi
hm4822.pdf pdf_icon

HM4821

HM4822 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFR9020PBF | ZVN3320FTA | SWT38N65K2F | TSM4N80CZ | 2SK3309B | IRFS640B | JFFM13N65D

 

 
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