STS2307 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GreenProductS TS 2307S amHop Microelectronics C orp.J UL.30 2004 v1.1P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.80 @ VG S = -4.5V-20V -3AS OT-23 package.100 @ VG S = -2.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C u

GreenProductS TS 2306ES amHop Microelectronics C orp.J an. 10 2008 Ver1.0N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.30 @ VG S = 4.5V20V 6.5A S urface Mount Package.40 @ VG S = 2.5VE S D Protected.DS OT-23GSABS OLUTE MAX

GreenProductSTS2305AaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.70 @ VGS=-4.5VSuface Mount Package.-20V -3.3A100 @ VGS=-2.5VDS OT23-3LDGSGS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RA

GreenProductS TS 2306AS amHop Microelectronics C orp.Apr. 27 2010 Ver1.1N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.40 @ VG S = 4.5V20V 4.5A S urface Mount Package.50 @ VG S = 2.5VE S D Protected.DSOT-23-3LGSABS OLUTE MA

GreenProductSTS2301AaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.95 @ VGS=-4.5VSuface Mount Package.-20V -2.6A130 @ VGS=-2.5VDS OT23-3LDGSGS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RAT

GreenProductS TS 2309AS amHop Microelectronics C orp.Dec 22 2004P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.130 @ VG S = -4.5V-20V -2.3AS OT-23 package.190@ VG S = -2.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unle

GreenProductS TS 2301S amHop Microelectronics C orp.J UL.30 2004 ver1.1P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.60 @ VG S = -4.5V-20V -3.4A80 @ VG S = -2.5VS OT-23 package.105 @ VG S = -1.8VDS OT-23GSAB S OLUTE MAXI

GreenProductSTS2305aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable. 57 @ VGS=-4.5VSuface Mount Package. 78 @ VGS=-4.0V 83 @ VGS=-3.7V-20V -3.4A 93 @ VGS=-3.1V 115 @ VGS=-2.5VDSOT-23DGSGSABSOL

GreenProductSTS2302AaS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.44 @ VGS= 4.5VSuface Mount Package.20V 4A65 @ VGS= 2.5VDS OT23-3LDGSGS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS

GreenProductS TS 2308AS amHop Microelectronics C orp.Dec 27 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.80 @ VG S = 4.5V20V 2.7AS OT-23 package.110 @ VG S = 2.5VDS OT-23GSAB S OLUTE MAXIMUM R ATING (TA=25 C unless ot

S TS 2300SS amHop Microelectronics C orp.S ep. 8 2005N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.35 @ VG S = 4.5V6A20V45 @ VG S = 2.5VS OT-23 package.DS OT-23GSAB S OLUTE MAXIMUM R ATING (TA=25 C unless otherwise noted)L

GreenProductS TS 2306S amHop Microelectronics C orp.Apr,21 2005 ver1.2N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.45 @ VG S = 4.5V20V 2.8AS OT-23 package.60 @ VG S =2.5VDS OT-23GSABS OLUTE MAXIMUM R ATINGS (TA=25 C unless o

STS2305Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

STS2306www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C