HM50N10K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM50N10K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 94 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET HM50N10K

HM50N10K Datasheet (PDF)

..1. Size:622K cn hmsemi
hm50n10k.pdf

HM50N10K N-Channel Enhancement Mode Power MOSFET Description The HM50N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =50A RDS(ON)

8.1. Size:575K cn hmsemi
hm50n15d.pdf

HM50N15 N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

8.2. Size:525K cn hmsemi
hm50n15.pdf

HM50N15N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

9.1. Size:97K chenmko
chm50n06pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM50N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

9.2. Size:68K chenmko
chm50n06ngp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM50N06NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

9.3. Size:940K jiaensemi
jfhm50n50c.pdf

JFHM50N50C Silicon N-Channel Power MOSFET VDSS(TC=150) 500 V ID 50 A Features PD(TC=25) 250 W Fast Switching RDS(ON) 0.082 ESD Improved Capability Low Gate Charge (Typical Data: 140nC) Low Reverse transfer capacitances(Typical: 80pF) 100% Single Pulse avalanche energy Test Applications: Power switch circuit of PC POWER Absolute

9.4. Size:716K cn hmsemi
hm50n06ka.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

9.5. Size:780K cn hmsemi
hm50n20.pdf

HM50N20N-Channel Enhancement Mode Power MOSFET Description The HM50N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)

9.6. Size:558K cn hmsemi
hm50n20d.pdf

HM50N20DN-Channel Enhancement Mode Power MOSFET Description The HM50N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)

9.7. Size:529K cn hmsemi
hm50n06i.pdf

HM50N06IN-Channel Enhancement Mode Power MOSFET Description The HM50N06I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

9.8. Size:588K cn hmsemi
hm50n06.pdf

HM50N06N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

9.9. Size:730K cn hmsemi
hm50n06d.pdf

HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =50A RDS(ON)

9.10. Size:714K cn hmsemi
hm50n08.pdf

HM50N08N-Channel Enhancement Mode Power MOSFET Description The HM50N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON)

9.11. Size:531K cn hmsemi
hm50n08k.pdf

H N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON)

9.12. Size:927K cn hmsemi
hm50n06a.pdf

HM50N06AN-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

9.13. Size:572K cn hmsemi
hm50n03k.pdf

HM50N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =50A RDS(ON)

9.14. Size:459K cn hmsemi
hm50n03i.pdf

9.15. Size:502K cn hmsemi
hm50n03.pdf

9.16. Size:577K cn hmsemi
hm50n06k.pdf

HM50N06KN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: