HM50N20 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM50N20
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 270 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 60 nS
Cossⓘ - Capacitancia de salida: 603 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de HM50N20 MOSFET
- Selecciónⓘ de transistores por parámetros
HM50N20 datasheet
..1. Size:780K cn hmsemi
hm50n20.pdf 
HM50N20 N-Channel Enhancement Mode Power MOSFET Description The HM50N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)
0.1. Size:558K cn hmsemi
hm50n20d.pdf
HM50N20D N-Channel Enhancement Mode Power MOSFET Description The HM50N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)
9.1. Size:97K chenmko
chm50n06pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM50N06PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
9.2. Size:68K chenmko
chm50n06ngp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM50N06NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.
9.4. Size:716K cn hmsemi
hm50n06ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
9.5. Size:529K cn hmsemi
hm50n06i.pdf
HM50N06I N-Channel Enhancement Mode Power MOSFET Description The HM50N06I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
9.6. Size:588K cn hmsemi
hm50n06.pdf
HM50N06 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)
9.7. Size:730K cn hmsemi
hm50n06d.pdf
HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =50A RDS(ON)
9.8. Size:714K cn hmsemi
hm50n08.pdf
HM50N08 N-Channel Enhancement Mode Power MOSFET Description The HM50N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON)
9.9. Size:531K cn hmsemi
hm50n08k.pdf
H N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON)
9.10. Size:575K cn hmsemi
hm50n15d.pdf
HM50N15 N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
9.11. Size:622K cn hmsemi
hm50n10k.pdf
HM50N10K N-Channel Enhancement Mode Power MOSFET Description The HM50N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =50A RDS(ON)
9.12. Size:927K cn hmsemi
hm50n06a.pdf
HM50N06A N-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
9.13. Size:572K cn hmsemi
hm50n03k.pdf
HM50N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =50A RDS(ON)
9.14. Size:459K cn hmsemi
hm50n03i.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
9.16. Size:577K cn hmsemi
hm50n06k.pdf
HM50N06K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)
9.17. Size:525K cn hmsemi
hm50n15.pdf
HM50N15 N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
Otros transistores... HM50N06I, HM50N06K, HM50N06KA, HM50N08, HM50N08K, HM50N10K, HM50N15, HM50N15D, IRFP260, HM50N20D, HM50P02K, HM50P03, HM50P03D, HM50P03K, HM50P06, HM50P06K, HM530
