FDMC7660S Datasheet. Equivalente

 ..1. Size:371K  fairchild semi
 fdmc7660s.pdf

December 2009 FDMC7660S N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 A and package technologies have been combined to offer the Hi

 6.1. Size:283K  fairchild semi
 fdmc7660dc.pdf

January 2011 FDMC7660DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

 6.2. Size:250K  fairchild semi
 fdmc7660.pdf

December 2009 FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A been especially tailored to minimize the on-state resistance. This High perfo

 7.1. Size:205K  fairchild semi
 fdmc7664.pdf

June 2010 FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 A been especially tailored to minimize the on-state resistance. This de